Discrete Semiconductor Products

UPA2521T1H-T1-AT

Obsolete

N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

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Discrete Semiconductor Products

Obsolete

N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

Technical Specifications

Parameters and characteristics for this part

Specification	UPA2521T1H-T1-AT

Current - Continuous Drain (Id) @ 25°C	8 A
Drain to Source Voltage (Vdss)	30 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	7.6 nC
Input Capacitance (Ciss) (Max) @ Vds	780 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	8-SMD, Flat Lead
Power Dissipation (Max)	1 W
Rds On (Max) @ Id, Vgs [Max]	16.5 mOhm
Supplier Device Package	8-VSOF
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id [Max]	2.5 V

N-Channel Mos Field Effect Transistor For Switching

Part	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs [Max]	Package / Case	Operating Temperature	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id [Max]	Drain to Source Voltage (Vdss)	Technology	Gate Charge (Qg) (Max) @ Vgs [Max]	FET Type	Supplier Device Package	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds
Renesas Electronics Corporation UPA2521T1H-T1-AT	1 W	16.5 mOhm	8-SMD Flat Lead	150 °C	8 A	2.5 V	30 V	MOSFET (Metal Oxide)	7.6 nC	N-Channel	8-VSOF	Surface Mount	780 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	417	$ 0.72

General part information

The UPA2521T1H is a N-Channel Mos Field Effect Transistor For Switching.

Technical documentation and resources