N-Channel Mos Field Effect Transistor For Switching
N-Channel Mos Field Effect Transistor For Switching
N-Channel Mos Field Effect Transistor For Switching
| Part | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs [Max] | Package / Case | Operating Temperature | Current - Continuous Drain (Id) @ 25°C | Vgs(th) (Max) @ Id [Max] | Drain to Source Voltage (Vdss) | Technology | Gate Charge (Qg) (Max) @ Vgs [Max] | FET Type | Supplier Device Package | Mounting Type | Input Capacitance (Ciss) (Max) @ Vds |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Renesas Electronics Corporation | 1 W | 16.5 mOhm | 8-SMD Flat Lead | 150 °C | 8 A | 2.5 V | 30 V | MOSFET (Metal Oxide) | 7.6 nC | N-Channel | 8-VSOF | Surface Mount | 780 pF |