Discrete Semiconductor Products

UPA2521T1H-T2-AT

Obsolete

N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

Technical Specifications

Parameters and characteristics for this part

Specification	UPA2521T1H-T2-AT

Current - Continuous Drain (Id) @ 25°C	8 A
Drain to Source Voltage (Vdss)	30 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	7.6 nC
Input Capacitance (Ciss) (Max) @ Vds	780 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	8-SMD, Flat Lead
Power Dissipation (Max)	1 W
Rds On (Max) @ Id, Vgs	16.5 mOhm
Supplier Device Package	8-VSOF
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	2.5 V

N-Channel Mos Field Effect Transistor For Switching

Part	FET Type	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Technology	Supplier Device Package	Power Dissipation (Max)	Package / Case	Gate Charge (Qg) (Max) @ Vgs	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Operating Temperature	Mounting Type	Current - Continuous Drain (Id) @ 25°C
Renesas Electronics Corporation UPA2521T1H-T1-AT	N-Channel	16.5 mOhm	780 pF	MOSFET (Metal Oxide)	8-VSOF	1 W	8-SMD Flat Lead	7.6 nC	2.5 V	30 V	150 °C	Surface Mount	8 A
Renesas Electronics Corporation UPA2521T1H-T2-AT	N-Channel	16.5 mOhm	780 pF	MOSFET (Metal Oxide)	8-VSOF	1 W	8-SMD Flat Lead	7.6 nC	2.5 V	30 V	150 °C	Surface Mount	8 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	84000	$ 1.06

General part information

The UPA2521T1H is a N-Channel Mos Field Effect Transistor For Switching.

Technical documentation and resources