JANTXV1N5552US
ActiveRECTIFIER DIODE SWITCHING 2-PIN 600V, 5A, 2000NS B-MELF BAG
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JANTXV1N5552US
ActiveRECTIFIER DIODE SWITCHING 2-PIN 600V, 5A, 2000NS B-MELF BAG
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Technical Specifications
Parameters and characteristics for this part
| Specification | JANTXV1N5552US |
|---|---|
| Current - Average Rectified (Io) | 3 A |
| Current - Reverse Leakage @ Vr | 1 µA |
| Grade | Military |
| Mounting Type | Surface Mount |
| Operating Temperature - Junction [Max] | 175 ░C |
| Operating Temperature - Junction [Min] | -65 C |
| Package / Case | E, SQ-MELF |
| Qualification | MIL-PRF-19500/420 |
| Reverse Recovery Time (trr) | 2 µs |
| Speed | Standard Recovery >500ns |
| Speed | 200 mA |
| Supplier Device Package | D-5B |
| Technology | Standard |
| Voltage - DC Reverse (Vr) (Max) [Max] | 600 V |
| Voltage - Forward (Vf) (Max) @ If | 1.2 V |
JANTXV1N5552US-Rectifier Series
Rectifier Diode Switching 2-Pin 600V, 5A, 2000ns B-MELF Bag
| Part | Technology | Mounting Type | Operating Temperature - Junction [Max] | Operating Temperature - Junction [Min] | Voltage - Forward (Vf) (Max) @ If | Speed | Speed | Current - Reverse Leakage @ Vr | Package / Case | Reverse Recovery Time (trr) | Current - Average Rectified (Io) | Voltage - DC Reverse (Vr) (Max) [Max] | Supplier Device Package | Grade | Qualification |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Microchip Technology | Standard | Surface Mount | 175 ░C | -65 C | 1.2 V | Standard Recovery >500ns | 200 mA | 1 µA | E SQ-MELF | 2 µs | 3 A | 600 V | D-5B | ||
 Microchip Technology | Standard | Surface Mount | 175 ░C | -65 C | 1.2 V | Standard Recovery >500ns | 200 mA | 1 µA | B SQ-MELF | 2 µs | 5 A | 600 V | B SQ-MELF | Military | MIL-PRF-19500/420 |
Microchip Technology | Standard | Surface Mount | 175 ░C | -65 C | 1.2 V | Standard Recovery >500ns | 200 mA | 1 µA | E SQ-MELF | 2 µs | 3 A | 600 V | D-5B | Military | MIL-PRF-19500/420 |
Microchip Technology | Standard | Surface Mount | 175 ░C | -65 C | 1.2 V | Standard Recovery >500ns | 200 mA | 1 µA | E SQ-MELF | 2 µs | 3 A | 600 V | D-5B | ||
 Microchip Technology | Standard | Through Hole | 175 ░C | -65 C | 1.2 V | Standard Recovery >500ns | 200 mA | 1 µA | Axial B | 2 µs | 3 A | 600 V | B Axial |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Bulk | 110 | $ 12.31 | |
| Microchip Direct | N/A | 1 | $ 13.26 | |
| Newark | Each | 100 | $ 12.31 | |
| 500 | $ 11.84 | |||
Description
General part information
JANTXV1N5552US-Rectifier Series
This "standard recovery" rectifier diode series is military qualified and is ideal for high-reliability applications where a failure cannot be tolerated. These industry-recognized 5.0 amp rated rectifiers for working peak reverse voltages from 200 to 1000 volts are hermetically sealed with voidless-glass construction using an internal "Category 1" metallurgical bond. These devices are also available in surface mount MELF package configurations. Microchip also offers numerous other rectifier products to meet higher and lower current ratings with various recovery time speed requirements including fast and ultrafast device types in both throughhole and surface mount packages.
Documents
Technical documentation and resources