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E-MELF PKG
Discrete Semiconductor Products

1N5552US/TR

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Microchip Technology

600 V STD RECTIFIER B-BODY SQ. MELF ROHS COMPLIANT: YES

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E-MELF PKG
Discrete Semiconductor Products

1N5552US/TR

Active
Microchip Technology

600 V STD RECTIFIER B-BODY SQ. MELF ROHS COMPLIANT: YES

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

Specification1N5552US/TR
Current - Average Rectified (Io)3 A
Current - Reverse Leakage @ Vr1 µA
Mounting TypeSurface Mount
Operating Temperature - Junction [Max]175 ░C
Operating Temperature - Junction [Min]-65 C
Package / CaseE, SQ-MELF
Reverse Recovery Time (trr)2 µs
SpeedStandard Recovery >500ns
Speed200 mA
Supplier Device PackageD-5B
TechnologyStandard
Voltage - DC Reverse (Vr) (Max) [Max]600 V
Voltage - Forward (Vf) (Max) @ If1.2 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTape & Reel (TR) 100$ 6.64
NewarkEach 100$ 6.64
500$ 6.39

Description

General part information

JANTXV1N5552US-Rectifier Series

This "standard recovery" rectifier diode series is military qualified and is ideal for high-reliability applications where a failure cannot be tolerated. These industry-recognized 5.0 amp rated rectifiers for working peak reverse voltages from 200 to 1000 volts are hermetically sealed with voidless-glass construction using an internal "Category 1" metallurgical bond. These devices are also available in surface mount MELF package configurations. Microchip also offers numerous other rectifier products to meet higher and lower current ratings with various recovery time speed requirements including fast and ultrafast device types in both throughhole and surface mount packages.

Documents

Technical documentation and resources