Deep-Dive with AI
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Deep-Dive with AI
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Technical Specifications
Parameters and characteristics for this part
| Specification | NTJD4105CT4G |
|---|---|
| Configuration | N and P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 630 mA, 775 mA |
| Drain to Source Voltage (Vdss) | 8 V, 20 V |
| FET Feature | Logic Level Gate |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 3 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 46 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Power - Max [Max] | 270 mW |
| Rds On (Max) @ Id, Vgs | 375 mOhm |
| Supplier Device Package | SC70-6, SC-88, SOT-363 |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 1.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
Description
General part information
NTJD4105C Series
This complementary dual device was designed with a small package (2 x 2 mm) and low RDS(on)MOSFETs for minimum footprint and increased circuit efficiency. The low RDS(on)performance is particularly suited for single or dual cell Li-Ion battery supplied devices such as cell phones, media players, digital cameras, and PDAs.
Documents
Technical documentation and resources
