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SOT-363
Discrete Semiconductor Products

NTJD4105CT1G

Active
ON Semiconductor

DUAL MOSFET, COMPLEMENTARY N AND P CHANNEL, 20 V, 20 V, 630 MA, 630 MA, 0.29 OHM

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SOT-363
Discrete Semiconductor Products

NTJD4105CT1G

Active
ON Semiconductor

DUAL MOSFET, COMPLEMENTARY N AND P CHANNEL, 20 V, 20 V, 630 MA, 630 MA, 0.29 OHM

Technical Specifications

Parameters and characteristics for this part

SpecificationNTJD4105CT1G
ConfigurationN and P-Channel
Current - Continuous Drain (Id) @ 25°C630 mA, 775 mA
Drain to Source Voltage (Vdss)8 V, 20 V
FET FeatureLogic Level Gate
Gate Charge (Qg) (Max) @ Vgs [Max]3 nC
Input Capacitance (Ciss) (Max) @ Vds46 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case6-TSSOP, SC-88, SOT-363
Power - Max [Max]270 mW
Rds On (Max) @ Id, Vgs375 mOhm
Supplier Device PackageSC70-6, SC-88, SOT-363
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id1.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.59
10$ 0.37
100$ 0.23
500$ 0.18
1000$ 0.16
Digi-Reel® 1$ 0.59
10$ 0.37
100$ 0.23
500$ 0.18
1000$ 0.16
Tape & Reel (TR) 3000$ 0.13
6000$ 0.12
9000$ 0.12
15000$ 0.11
21000$ 0.11
30000$ 0.10
75000$ 0.10
NewarkEach (Supplied on Full Reel) 3000$ 0.13
6000$ 0.13
12000$ 0.13
18000$ 0.12
30000$ 0.11
ON SemiconductorN/A 1$ 0.06

Description

General part information

NTJD4105C Series

This complementary dual device was designed with a small package (2 x 2 mm) and low RDS(on)MOSFETs for minimum footprint and increased circuit efficiency. The low RDS(on)performance is particularly suited for single or dual cell Li-Ion battery supplied devices such as cell phones, media players, digital cameras, and PDAs.