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IRG4RC10UTRPBF
Discrete Semiconductor Products

FQB55N06TM

Obsolete
ON Semiconductor

MOSFET N-CH 60V 55A D2PAK

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DocumentsDatasheet
IRG4RC10UTRPBF
Discrete Semiconductor Products

FQB55N06TM

Obsolete
ON Semiconductor

MOSFET N-CH 60V 55A D2PAK

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationFQB55N06TM
Current - Continuous Drain (Id) @ 25°C55 A
Drain to Source Voltage (Vdss)60 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs46 nC
Input Capacitance (Ciss) (Max) @ Vds1690 pF
Mounting TypeSurface Mount
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / CaseD2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)133 W, 3.75 W
Rds On (Max) @ Id, Vgs20 mOhm
Supplier Device PackageTO-263 (D2PAK)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)25 V
Vgs(th) (Max) @ Id4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyBulk 314$ 0.96
314$ 0.96

Description

General part information

FQB5 Series

N-Channel 60 V 55A (Tc) 3.75W (Ta), 133W (Tc) Surface Mount TO-263 (D2PAK)

Documents

Technical documentation and resources