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TO-263
Discrete Semiconductor Products

FQB5P20TM

Obsolete
ON Semiconductor

MOSFET P-CH 200V 4.8A D2PAK

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DocumentsDatasheet
TO-263
Discrete Semiconductor Products

FQB5P20TM

Obsolete
ON Semiconductor

MOSFET P-CH 200V 4.8A D2PAK

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationFQB5P20TM
Drain to Source Voltage (Vdss)200 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]13 nC
Input Capacitance (Ciss) (Max) @ Vds430 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseD2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)3.13 W, 75 W
Rds On (Max) @ Id, Vgs1.4 Ohm
Supplier Device PackageTO-263 (D2PAK)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)30 V
Vgs(th) (Max) @ Id5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$

Description

General part information

FQB5 Series

P-Channel 200 V 4.8A (Tc) 3.13W (Ta), 75W (Tc) Surface Mount TO-263 (D2PAK)

Documents

Technical documentation and resources