FQB5 Series
Manufacturer: ON Semiconductor
MOSFET N-CH 60V 55A D2PAK
| Part | Operating Temperature [Min] | Operating Temperature [Max] | Gate Charge (Qg) (Max) @ Vgs | Drive Voltage (Max Rds On, Min Rds On) | Technology | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | Drain to Source Voltage (Vdss) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | FET Type | Power Dissipation (Max) | Supplier Device Package | Package / Case | Mounting Type | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
ON Semiconductor | -55 °C | 175 ░C | 46 nC | 10 V | MOSFET (Metal Oxide) | 25 V | 1690 pF | 60 V | 20 mOhm | 4 V | N-Channel | 3.75 W 133 W | TO-263 (D2PAK) | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | Surface Mount | 55 A | |
ON Semiconductor | -55 °C | 150 °C | 10 V | MOSFET (Metal Oxide) | 30 V | 430 pF | 200 V | 1.4 Ohm | 5 V | P-Channel | 3.13 W 75 W | TO-263 (D2PAK) | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | Surface Mount | 13 nC | ||
ON Semiconductor | -55 °C | 175 ░C | 46 nC | 10 V | MOSFET (Metal Oxide) | 25 V | 1690 pF | 60 V | 20 mOhm | 4 V | N-Channel | 3.75 W 133 W | TO-263 (D2PAK) | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | Surface Mount | 55 A | |
ON Semiconductor | -55 °C | 175 ░C | 8.2 nC | 10 V | MOSFET (Metal Oxide) | 30 V | 250 pF | 100 V | 1.05 Ohm | 4 V | P-Channel | 3.75 W 40 W | TO-263 (D2PAK) | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | Surface Mount | 4.5 A |