
Discrete Semiconductor Products
SUP85N04-03-E3
ObsoleteVishay General Semiconductor - Diodes Division
MOSFET N-CH 40V 85A TO220AB
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Discrete Semiconductor Products
SUP85N04-03-E3
ObsoleteVishay General Semiconductor - Diodes Division
MOSFET N-CH 40V 85A TO220AB
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | SUP85N04-03-E3 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 85 A |
| Drain to Source Voltage (Vdss) | 40 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V, 4.5 V |
| FET Type | N-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 6860 pF |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 175 ░C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-220-3 |
| Power Dissipation (Max) | 250 W, 3.75 W |
| Rds On (Max) @ Id, Vgs | 3.5 mOhm |
| Supplier Device Package | TO-220AB |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 3 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
Description
General part information
SUP85 Series
N-Channel 40 V 85A (Tc) 3.75W (Ta), 250W (Tc) Through Hole TO-220AB
Documents
Technical documentation and resources