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SIHP23N60E-GE3
Discrete Semiconductor Products

SUP85N04-03-E3

Obsolete

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SIHP23N60E-GE3
Discrete Semiconductor Products

SUP85N04-03-E3

Obsolete

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationSUP85N04-03-E3
Current - Continuous Drain (Id) @ 25°C85 A
Drain to Source Voltage (Vdss)40 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeN-Channel
Input Capacitance (Ciss) (Max) @ Vds6860 pF
Mounting TypeThrough Hole
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / CaseTO-220-3
Power Dissipation (Max)250 W, 3.75 W
Rds On (Max) @ Id, Vgs3.5 mOhm
Supplier Device PackageTO-220AB
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id3 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$

Description

General part information

SUP85 Series

N-Channel 40 V 85A (Tc) 3.75W (Ta), 250W (Tc) Through Hole TO-220AB

Documents

Technical documentation and resources