Discrete Semiconductor Products

SUP85N10-10-GE3

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MOSFET N-CH 100V 85A TO220AB

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Discrete Semiconductor Products

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MOSFET N-CH 100V 85A TO220AB

Technical Specifications

Parameters and characteristics for this part

Specification	SUP85N10-10-GE3

Current - Continuous Drain (Id) @ 25°C	85 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	160 nC
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max)	250 W, 3.75 W
Rds On (Max) @ Id, Vgs	10.5 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3 V

Part	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	FET Type	Rds On (Max) @ Id, Vgs	Vgs (Max)	Technology	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max) [Max]
Vishay General Semiconductor - Diodes Division SUP85N10-10-GE3	85 A	4.5 V 10 V	TO-220-3	N-Channel	10.5 mOhm	20 V	MOSFET (Metal Oxide)	3.75 W 250 W	100 V	-55 °C	175 ░C	3 V	Through Hole	160 nC
Vishay General Semiconductor - Diodes Division SUP85N15-21-E3	85 A	10 V	TO-220-3	N-Channel	21 mOhm	20 V	MOSFET (Metal Oxide)	2.4 W 300 W	150 V	-55 °C	175 ░C	4 V	Through Hole	110 nC	TO-220AB	4750 pF
Vishay General Semiconductor - Diodes Division SUP85N04-03-E3	85 A	4.5 V 10 V	TO-220-3	N-Channel	3.5 mOhm	20 V	MOSFET (Metal Oxide)	3.75 W 250 W	40 V	-55 °C	175 ░C	3 V	Through Hole		TO-220AB	6860 pF
Vishay General Semiconductor - Diodes Division SUP85N02-03-E3	85 A	2.5 V 4.5 V	TO-220-3	N-Channel	3 mOhm	8 V	MOSFET (Metal Oxide)		20 V	-55 °C	175 ░C	450 mV	Through Hole		TO-220AB	21250 pF	250 W

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General part information

N-Channel 100 V 85A (Tc) 3.75W (Ta), 250W (Tc) Through Hole

Technical documentation and resources