SUP85 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
MOSFET N-CH 100V 85A TO220AB
| Part | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Package / Case | FET Type | Rds On (Max) @ Id, Vgs | Vgs (Max) | Technology | Power Dissipation (Max) | Drain to Source Voltage (Vdss) | Operating Temperature [Min] | Operating Temperature [Max] | Vgs(th) (Max) @ Id | Mounting Type | Gate Charge (Qg) (Max) @ Vgs [Max] | Supplier Device Package | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division | 85 A | 4.5 V 10 V | TO-220-3 | N-Channel | 10.5 mOhm | 20 V | MOSFET (Metal Oxide) | 3.75 W 250 W | 100 V | -55 °C | 175 ░C | 3 V | Through Hole | 160 nC | |||
Vishay General Semiconductor - Diodes Division | 85 A | 10 V | TO-220-3 | N-Channel | 21 mOhm | 20 V | MOSFET (Metal Oxide) | 2.4 W 300 W | 150 V | -55 °C | 175 ░C | 4 V | Through Hole | 110 nC | TO-220AB | 4750 pF | |
Vishay General Semiconductor - Diodes Division | 85 A | 4.5 V 10 V | TO-220-3 | N-Channel | 3.5 mOhm | 20 V | MOSFET (Metal Oxide) | 3.75 W 250 W | 40 V | -55 °C | 175 ░C | 3 V | Through Hole | TO-220AB | 6860 pF | ||
Vishay General Semiconductor - Diodes Division | 85 A | 2.5 V 4.5 V | TO-220-3 | N-Channel | 3 mOhm | 8 V | MOSFET (Metal Oxide) | 20 V | -55 °C | 175 ░C | 450 mV | Through Hole | TO-220AB | 21250 pF | 250 W |