Discrete Semiconductor Products

APT6029BLLG

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POWER FIELD-EFFECT TRANSISTOR, 21A I(D), 600V, 0.29OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-247AD

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Discrete Semiconductor Products

Active

POWER FIELD-EFFECT TRANSISTOR, 21A I(D), 600V, 0.29OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-247AD

Technical Specifications

Parameters and characteristics for this part

Specification	APT6029BLLG

Current - Continuous Drain (Id) @ 25°C	21 A
Drain to Source Voltage (Vdss)	600 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	65 nC
Input Capacitance (Ciss) (Max) @ Vds	2615 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power Dissipation (Max) [Max]	300 W
Rds On (Max) @ Id, Vgs	290 mOhm
Supplier Device Package	TO-247 [B]
Technology	MOSFET (Metal Oxide)

Part	FET Type	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Technology	Gate Charge (Qg) (Max) @ Vgs [Max]	Supplier Device Package	Package / Case	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Power Dissipation (Max) [Max]	Operating Temperature [Min]	Operating Temperature [Max]
Microchip Technology APT6029SLLG	N-Channel	21 A	Surface Mount	MOSFET (Metal Oxide)	65 nC	D3PAK	D3PAK (2 Leads + Tab) TO-268-3 TO-268AA	600 V	2615 pF	290 mOhm
Microchip Technology APT6029BLLG	N-Channel	21 A	Through Hole	MOSFET (Metal Oxide)	65 nC	TO-247 [B]	TO-247-3	600 V	2615 pF	290 mOhm	300 W	-55 °C	150 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 600 V 21A (Tc) 300W (Tc) Through Hole TO-247 [B]

Technical documentation and resources