APT6029 Series

Catalog

POWER FIELD-EFFECT TRANSISTOR, 21A I(D), 600V, 0.29OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET

Part	FET Type	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Technology	Gate Charge (Qg) (Max) @ Vgs [Max]	Supplier Device Package	Package / Case	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Power Dissipation (Max) [Max]	Operating Temperature [Min]	Operating Temperature [Max]
Microchip Technology APT6029SLLG	N-Channel	21 A	Surface Mount	MOSFET (Metal Oxide)	65 nC	D3PAK	D3PAK (2 Leads + Tab) TO-268-3 TO-268AA	600 V	2615 pF	290 mOhm
Microchip Technology APT6029BLLG	N-Channel	21 A	Through Hole	MOSFET (Metal Oxide)	65 nC	TO-247 [B]	TO-247-3	600 V	2615 pF	290 mOhm	300 W	-55 °C	150 °C