Discrete Semiconductor Products
RN1105MFV,L3F
ActiveToshiba Semiconductor and Storage
BIPOLAR TRANSISTORS, NPN BIAS RESISTOR BUILT-IN TRANSISTORS (BRT), 2.2 KΩ/47 KΩ, SOT-723(VESM)
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Discrete Semiconductor Products
RN1105MFV,L3F
ActiveToshiba Semiconductor and Storage
BIPOLAR TRANSISTORS, NPN BIAS RESISTOR BUILT-IN TRANSISTORS (BRT), 2.2 KΩ/47 KΩ, SOT-723(VESM)
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Technical Specifications
Parameters and characteristics for this part
| Specification | RN1105MFV,L3F |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 100 mA |
| Current - Collector Cutoff (Max) [Max] | 500 nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | 80 |
| Mounting Type | Surface Mount |
| Package / Case | SOT-723 |
| Power - Max [Max] | 150 mW |
| Resistor - Base (R1) | 2.2 kOhm |
| Resistor - Emitter Base (R2) | 47 kOhms |
| Supplier Device Package | VESM |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 300 mV |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 50 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
Description
General part information
RN1105 Series
Bipolar Transistors, NPN Bias Resistor Built-in Transistors (BRT), 2.2 kΩ/47 kΩ, SOT-723(VESM)
Documents
Technical documentation and resources
