RN1105 Series

Bipolar Transistors, NPN Bias Resistor Built-in Transistors (BRT), 2.2 kΩ/47 kΩ, SOT-723(VESM)

Catalog

Bipolar Transistors, NPN Bias Resistor Built-in Transistors (BRT), 2.2 kΩ/47 kΩ, SOT-723(VESM)

Part	Current - Collector Cutoff (Max) [Max]	Power - Max [Max]	Current - Collector (Ic) (Max) [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Transistor Type	Supplier Device Package	Resistor - Base (R1)	Resistor - Emitter Base (R2)	Mounting Type	Vce Saturation (Max) @ Ib, Ic	Package / Case	Voltage - Collector Emitter Breakdown (Max) [Max]	Frequency - Transition
Toshiba Semiconductor and Storage RN1105ACT(TPL3)	500 nA	100 mW	80 mA	80	NPN - Pre-Biased	CST3	2.2 kOhm	47 kOhms	Surface Mount	150 mV	SC-101 SOT-883	50 V
Toshiba Semiconductor and Storage RN1105MFV,L3F	500 nA	150 mW	100 mA	80	NPN - Pre-Biased	VESM	2.2 kOhm	47 kOhms	Surface Mount	300 mV	SOT-723	50 V
Toshiba Semiconductor and Storage RN1105,LF(CT	500 nA	100 mW	100 mA	80	NPN - Pre-Biased	SSM	2.2 kOhm	47 kOhms	Surface Mount	300 mV	SC-75 SOT-416	50 V	250 MHz
Toshiba Semiconductor and Storage RN1105MFV,L3F(CT	500 nA	150 mW	100 mA	80	NPN - Pre-Biased	VESM	2.2 kOhm	47 kOhms	Surface Mount	300 mV	SOT-723	50 V

Bipolar Transistors, NPN Bias Resistor Built-in Transistors (BRT), 2.2 kΩ/47 kΩ, SOT-723(VESM)