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CONEC Elektronische Bauelemente GmbH-4HDD26PCM99B20XE null null
Discrete Semiconductor Products

RN1105MFV,L3F(CT

Active
Toshiba Semiconductor and Storage

TRANSISTOR SILICON NPN EPITAXIAL PCT PROCESS SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS

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DocumentsDatasheet
CONEC Elektronische Bauelemente GmbH-4HDD26PCM99B20XE null null
Discrete Semiconductor Products

RN1105MFV,L3F(CT

Active
Toshiba Semiconductor and Storage

TRANSISTOR SILICON NPN EPITAXIAL PCT PROCESS SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationRN1105MFV,L3F(CT
Current - Collector (Ic) (Max) [Max]100 mA
Current - Collector Cutoff (Max) [Max]500 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]80
Mounting TypeSurface Mount
Package / CaseSOT-723
Power - Max [Max]150 mW
Resistor - Base (R1)2.2 kOhm
Resistor - Emitter Base (R2)47 kOhms
Supplier Device PackageVESM
Transistor TypeNPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic300 mV
Voltage - Collector Emitter Breakdown (Max) [Max]50 V

RN1105 Series

Bipolar Transistors, NPN Bias Resistor Built-in Transistors (BRT), 2.2 kΩ/47 kΩ, SOT-723(VESM)

PartCurrent - Collector Cutoff (Max) [Max]Power - Max [Max]Current - Collector (Ic) (Max) [Max]DC Current Gain (hFE) (Min) @ Ic, Vce [Min]Transistor TypeSupplier Device PackageResistor - Base (R1)Resistor - Emitter Base (R2)Mounting TypeVce Saturation (Max) @ Ib, IcPackage / CaseVoltage - Collector Emitter Breakdown (Max) [Max]Frequency - Transition
CST3
Toshiba Semiconductor and Storage
500 nA
100 mW
80 mA
80
NPN - Pre-Biased
CST3
2.2 kOhm
47 kOhms
Surface Mount
150 mV
SC-101
SOT-883
50 V
VESM
Toshiba Semiconductor and Storage
500 nA
150 mW
100 mA
80
NPN - Pre-Biased
VESM
2.2 kOhm
47 kOhms
Surface Mount
300 mV
SOT-723
50 V
SC-75, SOT-416
Toshiba Semiconductor and Storage
500 nA
100 mW
100 mA
80
NPN - Pre-Biased
SSM
2.2 kOhm
47 kOhms
Surface Mount
300 mV
SC-75
SOT-416
50 V
250 MHz
CONEC Elektronische Bauelemente GmbH-4HDD26PCM99B20XE null null
Toshiba Semiconductor and Storage
500 nA
150 mW
100 mA
80
NPN - Pre-Biased
VESM
2.2 kOhm
47 kOhms
Surface Mount
300 mV
SOT-723
50 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
ArrowN/A 50$ 0.09
100$ 0.06
200$ 0.04
500$ 0.04
1000$ 0.03
DigikeyCut Tape (CT) 1$ 0.15
10$ 0.09
100$ 0.06
500$ 0.04
1000$ 0.04
2000$ 0.03
Digi-Reel® 1$ 0.15
10$ 0.09
100$ 0.06
500$ 0.04
1000$ 0.04
2000$ 0.03
Tape & Reel (TR) 8000$ 0.03
16000$ 0.02
24000$ 0.02
40000$ 0.02
56000$ 0.02
80000$ 0.02
200000$ 0.02
400000$ 0.02
NewarkEach (Supplied on Cut Tape) 1$ 0.16
10$ 0.10
25$ 0.08
50$ 0.07
100$ 0.06
250$ 0.05
500$ 0.04
1000$ 0.03

Description

General part information

RN1105 Series

Bipolar Transistors, NPN Bias Resistor Built-in Transistors (BRT), 2.2 kΩ/47 kΩ, SOT-723(VESM)

Documents

Technical documentation and resources