
Discrete Semiconductor Products
RN1105MFV,L3F(CT
ActiveToshiba Semiconductor and Storage
TRANSISTOR SILICON NPN EPITAXIAL PCT PROCESS SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS
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Discrete Semiconductor Products
RN1105MFV,L3F(CT
ActiveToshiba Semiconductor and Storage
TRANSISTOR SILICON NPN EPITAXIAL PCT PROCESS SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS
Deep-Dive with AI
DocumentsDatasheet
Technical Specifications
Parameters and characteristics for this part
| Specification | RN1105MFV,L3F(CT |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 100 mA |
| Current - Collector Cutoff (Max) [Max] | 500 nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | 80 |
| Mounting Type | Surface Mount |
| Package / Case | SOT-723 |
| Power - Max [Max] | 150 mW |
| Resistor - Base (R1) | 2.2 kOhm |
| Resistor - Emitter Base (R2) | 47 kOhms |
| Supplier Device Package | VESM |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 300 mV |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 50 V |
RN1105 Series
Bipolar Transistors, NPN Bias Resistor Built-in Transistors (BRT), 2.2 kΩ/47 kΩ, SOT-723(VESM)
| Part | Current - Collector Cutoff (Max) [Max] | Power - Max [Max] | Current - Collector (Ic) (Max) [Max] | DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | Transistor Type | Supplier Device Package | Resistor - Base (R1) | Resistor - Emitter Base (R2) | Mounting Type | Vce Saturation (Max) @ Ib, Ic | Package / Case | Voltage - Collector Emitter Breakdown (Max) [Max] | Frequency - Transition |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | 500 nA | 100 mW | 80 mA | 80 | NPN - Pre-Biased | CST3 | 2.2 kOhm | 47 kOhms | Surface Mount | 150 mV | SC-101 SOT-883 | 50 V | |
Toshiba Semiconductor and Storage | 500 nA | 150 mW | 100 mA | 80 | NPN - Pre-Biased | VESM | 2.2 kOhm | 47 kOhms | Surface Mount | 300 mV | SOT-723 | 50 V | |
Toshiba Semiconductor and Storage | 500 nA | 100 mW | 100 mA | 80 | NPN - Pre-Biased | SSM | 2.2 kOhm | 47 kOhms | Surface Mount | 300 mV | SC-75 SOT-416 | 50 V | 250 MHz |
Toshiba Semiconductor and Storage | 500 nA | 150 mW | 100 mA | 80 | NPN - Pre-Biased | VESM | 2.2 kOhm | 47 kOhms | Surface Mount | 300 mV | SOT-723 | 50 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Arrow | N/A | 50 | $ 0.09 | |
| 100 | $ 0.06 | |||
| 200 | $ 0.04 | |||
| 500 | $ 0.04 | |||
| 1000 | $ 0.03 | |||
| Digikey | Cut Tape (CT) | 1 | $ 0.15 | |
| 10 | $ 0.09 | |||
| 100 | $ 0.06 | |||
| 500 | $ 0.04 | |||
| 1000 | $ 0.04 | |||
| 2000 | $ 0.03 | |||
| Digi-Reel® | 1 | $ 0.15 | ||
| 10 | $ 0.09 | |||
| 100 | $ 0.06 | |||
| 500 | $ 0.04 | |||
| 1000 | $ 0.04 | |||
| 2000 | $ 0.03 | |||
| Tape & Reel (TR) | 8000 | $ 0.03 | ||
| 16000 | $ 0.02 | |||
| 24000 | $ 0.02 | |||
| 40000 | $ 0.02 | |||
| 56000 | $ 0.02 | |||
| 80000 | $ 0.02 | |||
| 200000 | $ 0.02 | |||
| 400000 | $ 0.02 | |||
| Newark | Each (Supplied on Cut Tape) | 1 | $ 0.16 | |
| 10 | $ 0.10 | |||
| 25 | $ 0.08 | |||
| 50 | $ 0.07 | |||
| 100 | $ 0.06 | |||
| 250 | $ 0.05 | |||
| 500 | $ 0.04 | |||
| 1000 | $ 0.03 | |||
Description
General part information
RN1105 Series
Bipolar Transistors, NPN Bias Resistor Built-in Transistors (BRT), 2.2 kΩ/47 kΩ, SOT-723(VESM)
Documents
Technical documentation and resources