Discrete Semiconductor Products
STW55NM60ND
ObsoleteSTMicroelectronics
N-CHANNEL 600 V, 47 MOHM TYP, 51 A, FDMESH II POWER MOSFET IN A TO-247 PACKAGE
Discrete Semiconductor Products
STW55NM60ND
ObsoleteSTMicroelectronics
N-CHANNEL 600 V, 47 MOHM TYP, 51 A, FDMESH II POWER MOSFET IN A TO-247 PACKAGE
Technical Specifications
Parameters and characteristics for this part
| Specification | STW55NM60ND |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 51 A |
| Drain to Source Voltage (Vdss) | 600 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 190 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 5800 pF |
| Mounting Type | Through Hole |
| Operating Temperature | 150 °C |
| Package / Case | TO-247-3 |
| Power Dissipation (Max) | 350 W |
| Rds On (Max) @ Id, Vgs | 60 mOhm |
| Supplier Device Package | TO-247-3 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 25 V |
| Vgs(th) (Max) @ Id | 5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 0 | $ 10.30 | |
Description
General part information
STW55NM60ND Series
This FDmesh™ II Power MOSFET with intrinsic fast-recovery body diode is produced using the second generation of MDmesh™ technology. Utilizing a new strip-layout vertical structure, this revolutionary device features extremely low on-resistance and superior switching performance. It is ideal for bridge topologies and ZVS phase-shift converters.
Documents
Technical documentation and resources