Discrete Semiconductor Products

STW20NM60FD

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STMicroelectronics

MOSFET TRANSISTOR, N CHANNEL, 20 A, 600 V, 0.26 OHM, 10 V, 4 V ROHS COMPLIANT: YES

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DocumentsDatasheet Product Change Notice EN

Discrete Semiconductor Products

STW20NM60FD

Active

STMicroelectronics

MOSFET TRANSISTOR, N CHANNEL, 20 A, 600 V, 0.26 OHM, 10 V, 4 V ROHS COMPLIANT: YES

Deep-Dive with AI

DocumentsDatasheet Product Change Notice EN

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	STW20NM60FD

Current - Continuous Drain (Id) @ 25°C	20 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds [Max]	1300 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-65 °C
Package / Case	TO-247-3
Power Dissipation (Max) [Max]	214 W
Rds On (Max) @ Id, Vgs	290 mOhm
Supplier Device Package	TO-247-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	5 V

STW20 Series

N-channel 500 V, 0.23 Ohm, 20 A SuperMESH(TM) Power MOSFET Zener-protected in TO-247 package

Part	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Vgs(th) (Max) @ Id	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Rds On (Max) @ Id, Vgs	Package / Case	Supplier Device Package	FET Type	Current - Continuous Drain (Id) @ 25°C	Technology	Power Dissipation (Max) [Max]	Operating Temperature [Max]	Operating Temperature [Min]	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature	Gate Charge (Qg) (Max) @ Vgs	Gate Charge (Qg) (Max) @ Vgs [Max]	Power Dissipation (Max)
STMicroelectronics STW20NM60FD	600 V	1300 pF	5 V	Through Hole	10 V	30 V	290 mOhm	TO-247-3	TO-247-3	N-Channel	20 A	MOSFET (Metal Oxide)	214 W	150 °C	-65 °C
STMicroelectronics STW20NM50FD	500 V		5 V	Through Hole	10 V	30 V	250 mOhm	TO-247-3	TO-247-3	N-Channel	20 A	MOSFET (Metal Oxide)	214 W			1380 pF	150 °C	53 nC
STMicroelectronics STW20NK50Z	500 V	2600 pF	4.5 V	Through Hole	10 V	30 V	270 mOhm	TO-247-3	TO-247-3	N-Channel	17 A	MOSFET (Metal Oxide)					150 °C		119 nC	190 W
STMicroelectronics STW20NM60	600 V	1500 pF	5 V	Through Hole	10 V	30 V	290 mOhm	TO-247-3	TO-247-3	N-Channel	20 A	MOSFET (Metal Oxide)					150 °C	54 nC		192 W

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	588	$ 7.50
	Tube	1	$ 7.50
		30	$ 3.84
		120	$ 3.38
		510	$ 3.14
Mouser	N/A	1	$ 7.49
		25	$ 4.06
		100	$ 3.47
		250	$ 3.15
		600	$ 3.14
Newark	Each	1	$ 7.60
		10	$ 6.55
		25	$ 5.22
		60	$ 4.88
		120	$ 4.54
		270	$ 3.94

Description

General part information

STW20 Series

The MDmesh™is a new revolutionary Power MOSFET technology that associates the multiple drain process with the company’s PowerMESH™horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the company’s proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition’s products.