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Discrete Semiconductor Products

TSM900N06CP

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Taiwan Semiconductor Corporation

60V, 11A, SINGLE, N-CHANNEL LOW VOLTAGE MOSFETS

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Search across all available documentation for this part.

DocumentsAN-1002 How to Check SOA of MOSFET AN-1011 PerFET MOSFET Advantage Introduction +4

Symbol, Footprint, 3D Model

Discrete Semiconductor Products

TSM900N06CP

Active

Taiwan Semiconductor Corporation

60V, 11A, SINGLE, N-CHANNEL LOW VOLTAGE MOSFETS

Deep-Dive with AI

DocumentsAN-1002 How to Check SOA of MOSFET AN-1011 PerFET MOSFET Advantage Introduction +4

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	TSM900N06CP

Current - Continuous Drain (Id) @ 25°C	11 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	9.3 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	500 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)	25 W
Rds On (Max) @ Id, Vgs	90 mOhm
Supplier Device Package	TO-252 (DPAK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tape & Reel (TR)	5000	$ 0.52
		10000	$ 0.50

Description

General part information

TSM900 Series

N-Channel 60 V 11A (Tc) 25W (Tc) Surface Mount TO-252 (DPAK)

Documents

Technical documentation and resources

AN-1002 How to Check SOA of MOSFET

Resources - Application Note

AN-1011 PerFET MOSFET Advantage Introduction

Resources - Application Note

TO-252 3LD MKT HQ2SD07-TO252AA-013 REV A

Resources - Package Outline Drawing

TSM900N06CP - Datasheet

DataSheet - DataSheet

DECLARATION_LETTER_-_PRODUCT_SHELF_LIFE_REVB

Additional information - Product Shelf Life

TO-252 (D-PAK) - Packing Information

Resources - Pack and Label Drawing

TSM900 Series

Part	FET Type	Drain to Source Voltage (Vdss)	Vgs (Max)	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs	Vgs(th) (Max) @ Id	Power Dissipation (Max) [Max]	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Operating Temperature	Gate Charge (Qg) (Max) @ Vgs [Max]
Taiwan Semiconductor Corporation TSM900N10CP ROG	N-Channel	100 V	20 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	1480 pF	TO-252 (DPAK)	Surface Mount	4.5 V 10 V	9.3 nC	2.5 V	50 W	90 mOhm	15 A	-55 °C	150 °C	MOSFET (Metal Oxide)
Taiwan Semiconductor Corporation TSM900N06CP	N-Channel	60 V	20 V	DPAK (2 Leads + Tab) SC-63 TO-252-3		TO-252 (DPAK)	Surface Mount	4.5 V 10 V	9.3 nC	2.5 V		90 mOhm	11 A			MOSFET (Metal Oxide)	25 W	500 pF	150 °C
Taiwan Semiconductor Corporation TSM900N06CW RPG	N-Channel	60 V	20 V	TO-261-4 TO-261AA	525 pF	SOT-223	Surface Mount	4.5 V 10 V		2.5 V	7.8 W	90 mOhm	6 A	-55 °C	150 °C	MOSFET (Metal Oxide)				11 nC
Taiwan Semiconductor Corporation TSM900N10CH X0G	N-Channel	100 V	20 V	TO-251-3 Stub Leads IPAK	1480 pF	TO-251 (IPAK)	Through Hole	4.5 V 10 V	9.3 nC	2.5 V	50 W	90 mOhm	15 A	-55 °C	150 °C	MOSFET (Metal Oxide)
Taiwan Semiconductor Corporation TSM900N06CP ROG	N-Channel	60 V	20 V	DPAK (2 Leads + Tab) SC-63 TO-252-3		TO-252 (DPAK)	Surface Mount	4.5 V 10 V	9.3 nC	2.5 V		90 mOhm	11 A	-55 °C	150 °C	MOSFET (Metal Oxide)	25 W	500 pF