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TSM900N10CH X0G
Discrete Semiconductor Products

TSM900N10CH X0G

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Taiwan Semiconductor Corporation

MOSFETS 100V, 15A, SINGLE N-CHANNEL POWER MOSFET

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TSM900N10CH X0G
Discrete Semiconductor Products

TSM900N10CH X0G

Active
Taiwan Semiconductor Corporation

MOSFETS 100V, 15A, SINGLE N-CHANNEL POWER MOSFET

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationTSM900N10CH X0G
Current - Continuous Drain (Id) @ 25°C15 A
Drain to Source Voltage (Vdss)100 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs9.3 nC
Input Capacitance (Ciss) (Max) @ Vds1480 pF
Mounting TypeThrough Hole
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-251-3 Stub Leads, IPAK
Power Dissipation (Max)50 W
Rds On (Max) @ Id, Vgs90 mOhm
Supplier Device PackageIPAK
Supplier Device PackageTO-251
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id2.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 0$ 0.27
Tube 11250$ 0.27
MouserN/A 11250$ 0.44
26250$ 0.27

Description

General part information

TSM900 Series

N-Channel 100 V 15A (Tc) 50W (Tc) Through Hole TO-251 (IPAK)

Documents

Technical documentation and resources