TSM900N10CH X0G

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MOSFET N-CH 100V 15A TO251

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Discrete Semiconductor Products

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MOSFET N-CH 100V 15A TO251

Technical Specifications

Parameters and characteristics for this part

Specification	TSM900N10CH X0G

Current - Continuous Drain (Id) @ 25°C	15 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	9.3 nC
Input Capacitance (Ciss) (Max) @ Vds	1480 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-251-3 Stub Leads, IPAK
Power Dissipation (Max) [Max]	50 W
Rds On (Max) @ Id, Vgs	90 mOhm
Supplier Device Package	TO-251 (IPAK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

Part	FET Type	Drain to Source Voltage (Vdss)	Vgs (Max)	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs	Vgs(th) (Max) @ Id	Power Dissipation (Max) [Max]	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Operating Temperature	Gate Charge (Qg) (Max) @ Vgs [Max]
Taiwan Semiconductor Corporation TSM900N10CP ROG	N-Channel	100 V	20 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	1480 pF	TO-252 (DPAK)	Surface Mount	4.5 V 10 V	9.3 nC	2.5 V	50 W	90 mOhm	15 A	-55 °C	150 °C	MOSFET (Metal Oxide)
Taiwan Semiconductor Corporation TSM900N06CP	N-Channel	60 V	20 V	DPAK (2 Leads + Tab) SC-63 TO-252-3		TO-252 (DPAK)	Surface Mount	4.5 V 10 V	9.3 nC	2.5 V		90 mOhm	11 A			MOSFET (Metal Oxide)	25 W	500 pF	150 °C
Taiwan Semiconductor Corporation TSM900N06CW RPG	N-Channel	60 V	20 V	TO-261-4 TO-261AA	525 pF	SOT-223	Surface Mount	4.5 V 10 V		2.5 V	7.8 W	90 mOhm	6 A	-55 °C	150 °C	MOSFET (Metal Oxide)				11 nC
Taiwan Semiconductor Corporation TSM900N10CH X0G	N-Channel	100 V	20 V	TO-251-3 Stub Leads IPAK	1480 pF	TO-251 (IPAK)	Through Hole	4.5 V 10 V	9.3 nC	2.5 V	50 W	90 mOhm	15 A	-55 °C	150 °C	MOSFET (Metal Oxide)
Taiwan Semiconductor Corporation TSM900N06CP ROG	N-Channel	60 V	20 V	DPAK (2 Leads + Tab) SC-63 TO-252-3		TO-252 (DPAK)	Surface Mount	4.5 V 10 V	9.3 nC	2.5 V		90 mOhm	11 A	-55 °C	150 °C	MOSFET (Metal Oxide)	25 W	500 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	11250	$ 0.27

General part information

N-Channel 100 V 15A (Tc) 50W (Tc) Through Hole TO-251 (IPAK)

Technical documentation and resources