Discrete Semiconductor Products
R6009ENJTL
ActiveRohm Semiconductor
600V 9A TO-263, LOW-NOISE POWER MOSFET
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Discrete Semiconductor Products
R6009ENJTL
ActiveRohm Semiconductor
600V 9A TO-263, LOW-NOISE POWER MOSFET
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | R6009ENJTL |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 9 A |
| Drain to Source Voltage (Vdss) | 600 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 23 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 430 pF |
| Mounting Type | Surface Mount |
| Operating Temperature | 150 °C |
| Package / Case | D2PAK (2 Leads + Tab), TO-263-3, TO-263AB |
| Power Dissipation (Max) | 40 W |
| Rds On (Max) @ Id, Vgs | 535 mOhm |
| Supplier Device Package | LPTS |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
Super Junction-MOS EN Series
Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications. Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.
Documents
Technical documentation and resources
