Discrete Semiconductor Products

R6011ENJTL

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Rohm Semiconductor

600V 11A TO-263, LOW-NOISE POWER MOSFET

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Search across all available documentation for this part.

DocumentsTechnical Data Sheet EN

Discrete Semiconductor Products

R6011ENJTL

Active

Rohm Semiconductor

600V 11A TO-263, LOW-NOISE POWER MOSFET

Deep-Dive with AI

DocumentsTechnical Data Sheet EN

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	R6011ENJTL

Current - Continuous Drain (Id) @ 25°C	11 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	32 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	670 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Power Dissipation (Max)	40 W
Supplier Device Package	LPTS
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V

Super Junction-MOS EN Series

600V 9A TO-263, Low-noise Power MOSFET

Part	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs [Max]	FET Type	Input Capacitance (Ciss) (Max) @ Vds [Max]	Operating Temperature	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Package / Case	Technology	Power Dissipation (Max)	Supplier Device Package	Mounting Type	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds
Rohm Semiconductor R6011ENJTL	600 V	32 nC	N-Channel	670 pF	150 °C	10 V	11 A	20 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	MOSFET (Metal Oxide)	40 W	LPTS	Surface Mount
Rohm Semiconductor R6009ENJTL	600 V		N-Channel		150 °C	10 V	9 A	20 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	MOSFET (Metal Oxide)	40 W	LPTS	Surface Mount	23 nC	535 mOhm	430 pF

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 4.72
Mouser	N/A	1000	$ 1.70
		2000	$ 1.69
Newark	Each (Supplied on Cut Tape)	1	$ 1.77

Description

General part information

Super Junction-MOS EN Series

Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications. Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.

Documents

Technical documentation and resources

Technical Data Sheet EN

Datasheet