Super Junction-MOS EN Series

600V 9A TO-263, Low-noise Power MOSFET

Catalog

600V 9A TO-263, Low-noise Power MOSFET

Part	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs [Max]	FET Type	Input Capacitance (Ciss) (Max) @ Vds [Max]	Operating Temperature	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Package / Case	Technology	Power Dissipation (Max)	Supplier Device Package	Mounting Type	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds
Rohm Semiconductor R6011ENJTL	600 V	32 nC	N-Channel	670 pF	150 °C	10 V	11 A	20 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	MOSFET (Metal Oxide)	40 W	LPTS	Surface Mount
Rohm Semiconductor R6009ENJTL	600 V		N-Channel		150 °C	10 V	9 A	20 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	MOSFET (Metal Oxide)	40 W	LPTS	Surface Mount	23 nC	535 mOhm	430 pF

Catalog

600V 9A TO-263, Low-noise Power MOSFET

Description

Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications. Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.