2N6212
Active300V 5MA 3W PNP POWER BJT THT TO-66 ROHS COMPLIANT: YES
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2N6212
Active300V 5MA 3W PNP POWER BJT THT TO-66 ROHS COMPLIANT: YES
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Technical Specifications
Parameters and characteristics for this part
| Specification | 2N6212 |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 2 A |
| DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | 30 hFE |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 200 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-66-2, TO-213AA |
| Power - Max [Max] | 3 W |
| Supplier Device Package | TO-66 (TO-213AA) |
| Transistor Type | PNP |
| Vce Saturation (Max) @ Ib, Ic [Max] | 1.6 V |
| Voltage - Collector Emitter Breakdown (Max) | 300 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Bulk | 100 | $ 38.61 | |
| Microchip Direct | N/A | 1 | $ 41.58 | |
| Newark | Each | 100 | $ 38.61 | |
| 500 | $ 37.13 | |||
Description
General part information
2N6212-Transistor Series
This specification covers the performance requirements for PNP silicon, high-voltage, 2N6211, 2N6212, 2N6213 and 2N6213A transistors. Four levels of product assurance are provided for each encapsulated device (JAN, JANTX, JANTXV and JANS) as specified in MIL-PRF-19500/461. Two levels of product assurance are provided for each unencapsulated device (JANHC and JANKC). The device package outlines are as follows: TO-66 for all encapsulated device types. The dimensions and topography for JANHC and JANKC unencapsulated die are as outlined in MIL-PRF-19500/461.
Documents
Technical documentation and resources