2N6212-Transistor Series

MIL-PRF-19500/461

Catalog

MIL-PRF-19500/461

Part	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Power - Max [Max]	Voltage - Collector Emitter Breakdown (Max)	Transistor Type	Operating Temperature [Min]	Operating Temperature [Max]	Vce Saturation (Max) @ Ib, Ic [Max]	Supplier Device Package	Package / Case	Current - Collector (Ic) (Max) [Max]	Mounting Type
Microchip Technology 2N6212	30 hFE	3 W	300 V	PNP	-55 °C	200 °C	1.6 V	TO-66 (TO-213AA)	TO-213AA TO-66-2	2 A	Through Hole

Catalog

MIL-PRF-19500/461

Key Features

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Description

This specification covers the performance requirements for PNP silicon, high-voltage, 2N6211, 2N6212, 2N6213 and 2N6213A transistors. Four levels of product assurance are provided for each encapsulated device (JAN, JANTX, JANTXV and JANS) as specified in MIL-PRF-19500/461. Two levels of product assurance are provided for each unencapsulated device (JANHC and JANKC). The device package outlines are as follows: TO-66 for all encapsulated device types. The dimensions and topography for JANHC and JANKC unencapsulated die are as outlined in MIL-PRF-19500/461.