Discrete Semiconductor Products
STS6P3LLH6
ActiveSTMicroelectronics
P-CHANNEL 30 V, 0.024 OHM TYP., 6 A, STRIPFET(TM) VI DEEPGATE POWER MOSFET IN A SO-8 PACKAGE
Discrete Semiconductor Products
STS6P3LLH6
ActiveSTMicroelectronics
P-CHANNEL 30 V, 0.024 OHM TYP., 6 A, STRIPFET(TM) VI DEEPGATE POWER MOSFET IN A SO-8 PACKAGE
Technical Specifications
Parameters and characteristics for this part
| Specification | STS6P3LLH6 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 6 A |
| Drain to Source Voltage (Vdss) | 30 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V, 4.5 V |
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 12 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 1450 pF |
| Mounting Type | Surface Mount |
| Operating Temperature | 150 °C |
| Package / Case | 0.154 in |
| Package / Case | 8-SOIC |
| Package / Case | 3.9 mm |
| Power Dissipation (Max) | 2.7 W |
| Rds On (Max) @ Id, Vgs | 30 mOhm |
| Supplier Device Package | 8-SOIC |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 1 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
STS6P3LLH6 Series
This device is a P-channel Power MOSFET developed using the STripFET H6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on)in all packages.
Documents
Technical documentation and resources