STS6P3LLH6 Series

P-channel 30 V, 0.024 Ohm typ., 6 A, STripFET(TM) VI DeepGATE Power MOSFET in a SO-8 package

Catalog

P-channel 30 V, 0.024 Ohm typ., 6 A, STripFET(TM) VI DeepGATE Power MOSFET in a SO-8 package

Part	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Technology	Package / Case	Package / Case	Package / Case	Operating Temperature	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Supplier Device Package	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs (Max)	FET Type	Mounting Type
STMicroelectronics STS6P3LLH6	1 V	30 V	MOSFET (Metal Oxide)	0.154 in	8-SOIC	3.9 mm	150 °C	6 A	1450 pF	4.5 V 10 V	30 mOhm	8-SOIC	2.7 W	12 nC	20 V	P-Channel	Surface Mount

Catalog

P-channel 30 V, 0.024 Ohm typ., 6 A, STripFET(TM) VI DeepGATE Power MOSFET in a SO-8 package

Description

This device is a P-channel Power MOSFET developed using the STripFET H6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on)in all packages.