
Discrete Semiconductor Products
RGTH00TS65GC11
NRNDRohm Semiconductor
IGBT, 85 A, 1.6 V, 277 W, 650 V, TO-247N, 3 PINS
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DocumentsIGBT Flammability

Discrete Semiconductor Products
RGTH00TS65GC11
NRNDRohm Semiconductor
IGBT, 85 A, 1.6 V, 277 W, 650 V, TO-247N, 3 PINS
Deep-Dive with AI
DocumentsIGBT Flammability
Technical Specifications
Parameters and characteristics for this part
| Specification | RGTH00TS65GC11 |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 85 A |
| Current - Collector Pulsed (Icm) | 200 A |
| Gate Charge | 94 nC |
| IGBT Type | Trench Field Stop |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 175 °C |
| Operating Temperature [Min] | -40 C |
| Package / Case | TO-247-3 |
| Power - Max [Max] | 277 W |
| Supplier Device Package | TO-247N |
| Td (on/off) @ 25°C | 143 ns, 39 ns |
| Test Condition [custom] | 400 V, 15 V |
| Test Condition [custom] | 10 Ohm |
| Test Condition [custom] | 50 A |
| Vce(on) (Max) @ Vge, Ic | 2.1 V |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
RGTH00TS65D Series
ROHM's IGBT products will contribute to energy saving high efficiency and a wide range of high voltage and high-current applications.
Documents
Technical documentation and resources