
Discrete Semiconductor Products
RGTH00TS65DGC11
NRNDRohm Semiconductor
IGBT TRNCH FIELD 650V 85A TO247N
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DocumentsIGBT Flammability

Discrete Semiconductor Products
RGTH00TS65DGC11
NRNDRohm Semiconductor
IGBT TRNCH FIELD 650V 85A TO247N
Deep-Dive with AI
DocumentsIGBT Flammability
Technical Specifications
Parameters and characteristics for this part
| Specification | RGTH00TS65DGC11 |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 85 A |
| Current - Collector Pulsed (Icm) | 200 A |
| Gate Charge | 94 nC |
| IGBT Type | Trench Field Stop |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 175 °C |
| Operating Temperature [Min] | -40 C |
| Package / Case | TO-247-3 |
| Power - Max [Max] | 277 W |
| Reverse Recovery Time (trr) | 54 ns |
| Supplier Device Package | TO-247N |
| Td (on/off) @ 25°C | 143 ns, 39 ns |
| Test Condition [custom] | 400 V, 15 V |
| Test Condition [custom] | 10 Ohm |
| Test Condition [custom] | 50 A |
| Vce(on) (Max) @ Vge, Ic | 2.1 V |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tube | 450 | $ 3.35 | |
Description
General part information
RGTH00TS65D Series
ROHM's IGBT products will contribute to energy saving high efficiency and a wide range of high voltage and high-current applications.
Documents
Technical documentation and resources