Zenode.ai Logo
Beta
TO-247N
Discrete Semiconductor Products

RGTH00TS65DGC11

NRND
Rohm Semiconductor

IGBT TRNCH FIELD 650V 85A TO247N

Deep-Dive with AI

Search across all available documentation for this part.

TO-247N
Discrete Semiconductor Products

RGTH00TS65DGC11

NRND
Rohm Semiconductor

IGBT TRNCH FIELD 650V 85A TO247N

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationRGTH00TS65DGC11
Current - Collector (Ic) (Max) [Max]85 A
Current - Collector Pulsed (Icm)200 A
Gate Charge94 nC
IGBT TypeTrench Field Stop
Mounting TypeThrough Hole
Operating Temperature [Max]175 °C
Operating Temperature [Min]-40 C
Package / CaseTO-247-3
Power - Max [Max]277 W
Reverse Recovery Time (trr)54 ns
Supplier Device PackageTO-247N
Td (on/off) @ 25°C143 ns, 39 ns
Test Condition [custom]400 V, 15 V
Test Condition [custom]10 Ohm
Test Condition [custom]50 A
Vce(on) (Max) @ Vge, Ic2.1 V
Voltage - Collector Emitter Breakdown (Max)650 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 450$ 3.35

Description

General part information

RGTH00TS65D Series

ROHM's IGBT products will contribute to energy saving high efficiency and a wide range of high voltage and high-current applications.

Documents

Technical documentation and resources