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TO-247N
Discrete Semiconductor Products

RGTH00TS65DGC11

NRND
Rohm Semiconductor

IGBT TRNCH FIELD 650V 85A TO247N

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TO-247N
Discrete Semiconductor Products

RGTH00TS65DGC11

NRND
Rohm Semiconductor

IGBT TRNCH FIELD 650V 85A TO247N

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationRGTH00TS65DGC11
Current - Collector (Ic) (Max) [Max]85 A
Current - Collector Pulsed (Icm)200 A
Gate Charge94 nC
IGBT TypeTrench Field Stop
Mounting TypeThrough Hole
Operating Temperature [Max]175 °C
Operating Temperature [Min]-40 °C
Package / CaseTO-247-3
Power - Max [Max]277 W
Reverse Recovery Time (trr)54 ns
Supplier Device PackageTO-247N
Td (on/off) @ 25°C39 ns, 143 ns
Test Condition10 Ohm, 50 A, 15 V, 400 V
Vce(on) (Max) @ Vge, Ic2.1 V
Voltage - Collector Emitter Breakdown (Max) [Max]650 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 0$ 2.67
Tube 450$ 3.35

Description

General part information

RGTH00 Series

ROHM's IGBT products will contribute to energy saving high efficiency and a wide range of high voltage and high-current applications.

Documents

Technical documentation and resources