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R6022YNZ4C13

Discrete Semiconductor Products

RGTH00TS65DGC13

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Rohm Semiconductor

HIGH-SPEED SWITCHING TYPE, 650V 50A, FRD BUILT-IN, TO-247N, FIELD STOP TRENCH IGBT

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Search across all available documentation for this part.

DocumentsTechnical Data Sheet EN About Export Administration Regulations (EAR)+29

R6022YNZ4C13

Discrete Semiconductor Products

RGTH00TS65DGC13

Active

Rohm Semiconductor

HIGH-SPEED SWITCHING TYPE, 650V 50A, FRD BUILT-IN, TO-247N, FIELD STOP TRENCH IGBT

Deep-Dive with AI

DocumentsTechnical Data Sheet EN About Export Administration Regulations (EAR)+29

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	RGTH00TS65DGC13

Current - Collector (Ic) (Max) [Max]	85 A
Current - Collector Pulsed (Icm)	200 A
Gate Charge	94 nC
IGBT Type	Trench Field Stop
Mounting Type	Through Hole
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-40 C
Package / Case	TO-247-3
Power - Max [Max]	277 W
Reverse Recovery Time (trr)	54 ns
Supplier Device Package	TO-247G
Td (on/off) @ 25°C	143 ns, 39 ns
Test Condition [custom]	400 V, 15 V
Test Condition [custom]	10 Ohm
Test Condition [custom]	50 A
Vce(on) (Max) @ Vge, Ic	2.1 V
Voltage - Collector Emitter Breakdown (Max)	650 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 7.77
		10	$ 5.27
		100	$ 3.86
		600	$ 3.27
Newark	Each	1	$ 7.97
		1	$ 7.97
		10	$ 5.45
		10	$ 5.45
		25	$ 5.44
		25	$ 5.44
		50	$ 4.72
		50	$ 4.72
		100	$ 3.99
		100	$ 3.99
		250	$ 3.94
		250	$ 3.94

Description

General part information

RGTH00TS65D Series

ROHM's IGBT products will contribute to energy saving high efficiency and a wide range of high voltage and high-current applications.

Documents

Technical documentation and resources

Technical Data Sheet EN

About Export Administration Regulations (EAR)

Export Information

PCB Layout Thermal Design Guide

Example of Heat Dissipation Design for TO Packages: Effect of Heat Dissipation Materials

Method for Calculating Junction Temperature from Transient Thermal Resistance Data

Measurement Method and Usage of Thermal Resistance RthJC

How to Create Symbols for PSpice Models

4 Steps for Successful Thermal Designing of Power Devices

Compliance of the ELV directive

Environmental Data

Impedance Characteristics of Bypass Capacitor

Schematic Design & Verification

Overview of ROHM's Simulation Models(for ICs and Discrete Semiconductors)

Technical Article

How to Use LTspice® Models: Tips for Improving Convergence

Schematic Design & Verification

θ<sub>JA</sub> and Ψ<sub>JT</sub>

Judgment Criteria of Thermal Evaluation

About Flammability of Materials

Environmental Data

Semikron Danfoss: Partnering for the Safe Supply of Industrial Power Modules

What Is Thermal Design

Precautions for Thermal Resistance of Insulation Sheet

Reliability Test Result

Manufacturing Data

Types and Features of Transistors

Application Note

Simulation Guide for PTC Heater Thermal Simulation (ROHM Solution Simulator)

Notes for Temperature Measurement Using Thermocouples

Method for Monitoring Switching Waveform

Schematic Design & Verification

Moisture Sensitivity Level

Package Information

The Problem with Traditional Vaccine Storage Freezers and How ROHM Cutting-edge Power Solutions Can Take them to the Next Level

Power Eco Family: Overview of ROHM's Power Semiconductor Lineup

Importance of Probe Calibration When Measuring Power: Deskew

Schematic Design & Verification

Two-Resistor Model for Thermal Simulation

How to Use the Thermal Resistance and Thermal Characteristics Parameters

Anti-Whisker formation

Package Information

Generation Mechanism of Voltage Surge on Commutation Side (Basic)

Technical Article

RGTH00TS65D Series

High-Speed Switching Type, 650V 50A, FRD Built-in, TO-247N, Field Stop Trench IGBT

Part	IGBT Type	Mounting Type	Gate Charge	Vce(on) (Max) @ Vge, Ic	Td (on/off) @ 25°C	Package / Case	Current - Collector Pulsed (Icm)	Power - Max [Max]	Test Condition [custom]	Test Condition [custom]	Test Condition [custom]	Voltage - Collector Emitter Breakdown (Max)	Supplier Device Package	Current - Collector (Ic) (Max) [Max]	Reverse Recovery Time (trr)	Operating Temperature [Min]	Operating Temperature [Max]
Rohm Semiconductor RGTH00TS65DGC13	Trench Field Stop	Through Hole	94 nC	2.1 V	39 ns 143 ns	TO-247-3	200 A	277 W	15 V 400 V	10 Ohm	50 A	650 V	TO-247G	85 A	54 ns	-40 C	175 °C
Rohm Semiconductor RGTH00TS65GC11	Trench Field Stop	Through Hole	94 nC	2.1 V	39 ns 143 ns	TO-247-3	200 A	277 W	15 V 400 V	10 Ohm	50 A	650 V	TO-247N	85 A		-40 C	175 °C
Rohm Semiconductor RGTH00TS65GC13	Trench Field Stop	Through Hole	94 nC	2.1 V	39 ns 143 ns	TO-247-3	200 A	277 W	15 V 400 V	10 Ohm	50 A	650 V	TO-247	85 A		-40 C	175 °C
Rohm Semiconductor RGTH00TS65DGC11	Trench Field Stop	Through Hole	94 nC	2.1 V	39 ns 143 ns	TO-247-3	200 A	277 W	15 V 400 V	10 Ohm	50 A	650 V	TO-247N	85 A	54 ns	-40 C	175 °C