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Discrete Semiconductor Products
ICPB1020-1-110I
ActiveMicrochip Technology
DC-14 GHZ 100W DISCRETE GAN HEMT
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DocumentsICPB1020 GaN HEMT 100W
Discrete Semiconductor Products
ICPB1020-1-110I
ActiveMicrochip Technology
DC-14 GHZ 100W DISCRETE GAN HEMT
Deep-Dive with AI
DocumentsICPB1020 GaN HEMT 100W
Technical Specifications
Parameters and characteristics for this part
| Specification | ICPB1020-1-110I |
|---|---|
| Current - Test | 1 A |
| Current Rating (Amps) | 8 A |
| Frequency | 14 GHz |
| Gain | 7.4 dB |
| Mounting Type | Surface Mount |
| Package / Case | Die |
| Power - Output | 100 W |
| Supplier Device Package | Die |
| Technology | GaN HEMT |
| Voltage - Rated | 28 V |
| Voltage - Test | 28 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Box | 1 | $ 291.20 | |
| 25 | $ 196.00 | |||
| Microchip Direct | BOX | 1 | $ 291.20 | |
| 5 | $ 250.60 | |||
| 10 | $ 219.80 | |||
| 25 | $ 196.00 | |||
| 50 | $ 179.20 | |||
| 100 | $ 165.20 | |||
| 250 | $ 155.40 | |||
| 500 | $ 149.80 | |||
| 1000 | $ 147.00 | |||
Description
General part information
ICPB1020-Power-Transistor Series
The ICPB1020 is a 100 W, 0.25μm GaN SiC discrete HEMT that operates from DC-14 GHz. The design is optimized for power and efficiency using field plate technology and can deliver up to 50 Watts (50 dB) P3dB nominal output power across the band with up to 65% PAE and 16 dB power gain at 6 GHz.
Documents
Technical documentation and resources