Catalog
GaN Power Transistor, 100 Watt
Key Features
- Frequency Range DC-14 GHz
- 50 dBm (100 Watts) Nominal P3dB
- Maximum PAE at 6 GHz of 65%
- 17.8dB Linear Gain at 6 GHz
- Drain Bias 28V
- Technology: 0.25μm GaN on SiC
- Lead-free and RoHS compliant
- Chip Dimensions: 0.824 x 4.562 x 0.10 mm
Description
AI
The ICPB1020 is a 100 W, 0.25μm GaN SiC discrete HEMT that operates from DC-14 GHz. The design is optimized for power and efficiency using field plate technology and can deliver up to 50 Watts (50 dB) P3dB nominal output power across the band with up to 65% PAE and 16 dB power gain at 6 GHz.