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8-PQFN
Discrete Semiconductor Products

FDMS0308CS

Obsolete
ON Semiconductor

MOSFET N-CH 30V 22A 8PQFN

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DocumentsDatasheet
8-PQFN
Discrete Semiconductor Products

FDMS0308CS

Obsolete
ON Semiconductor

MOSFET N-CH 30V 22A 8PQFN

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationFDMS0308CS
Current - Continuous Drain (Id) @ 25°C22 A
Drain to Source Voltage (Vdss)30 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs66 nC
Input Capacitance (Ciss) (Max) @ Vds4225 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case8-PowerTDFN
Power Dissipation (Max)65 W, 2.5 W
Rds On (Max) @ Id, Vgs3 mOhm
Supplier Device Package8-PQFN (5x6)
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id3 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyBulk 201$ 1.50
201$ 1.50

Description

General part information

FDMS0309AS Series

The FDMS0309AS has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on)while maintaining excellent switching performance. This device has the added benefit of an efficient monolithic Schottky body diode.

Documents

Technical documentation and resources