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8-PQFN
Discrete Semiconductor Products

FDMS0309AS_SN00347

Obsolete
ON Semiconductor

MOSFET N-CH 30V 21A/49A 8PQFN

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8-PQFN
Discrete Semiconductor Products

FDMS0309AS_SN00347

Obsolete
ON Semiconductor

MOSFET N-CH 30V 21A/49A 8PQFN

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationFDMS0309AS_SN00347
Current - Continuous Drain (Id) @ 25°C49 A, 21 A
Drain to Source Voltage (Vdss)30 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeN-Channel
Input Capacitance (Ciss) (Max) @ Vds [Max]3000 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case8-PowerTDFN
Power Dissipation (Max)50 W, 2.5 W
Supplier Device Package8-PQFN (5x6)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id3 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

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Description

General part information

FDMS0309AS Series

The FDMS0309AS has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on)while maintaining excellent switching performance. This device has the added benefit of an efficient monolithic Schottky body diode.

Documents

Technical documentation and resources

No documents available