FDMS0309AS Series

N-Channel PowerTrench® SyncFET™ 30V, 49A, 3.5mΩ

Catalog

N-Channel PowerTrench® SyncFET™ 30V, 49A, 3.5mΩ

Part	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	Vgs (Max)	Technology	FET Type	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Drain to Source Voltage (Vdss)	Supplier Device Package	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Input Capacitance (Ciss) (Max) @ Vds [Max]	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs
ON Semiconductor FDMS0309AS_SN00347	-55 °C	150 °C	3 V	20 V	MOSFET (Metal Oxide)	N-Channel	21 A 49 A	Surface Mount	30 V	8-PQFN (5x6)	2.5 W 50 W	4.5 V 10 V	8-PowerTDFN	3000 pF
ON Semiconductor FDMS0308CS	-55 °C	150 °C	3 V		MOSFET (Metal Oxide)	N-Channel	22 A	Surface Mount	30 V	8-PQFN (5x6)	2.5 W 65 W		8-PowerTDFN		3 mOhm	4225 pF	66 nC
ON Semiconductor FDMS0306S
ON Semiconductor FDMS0308CS	-55 °C	150 °C	3 V		MOSFET (Metal Oxide)	N-Channel	22 A	Surface Mount	30 V	8-PQFN (5x6)	2.5 W 65 W		8-PowerTDFN		3 mOhm	4225 pF	66 nC
ON Semiconductor FDMS0309AS	-55 °C	150 °C	3 V	20 V	MOSFET (Metal Oxide)	N-Channel	21 A 49 A	Surface Mount	30 V	8-PQFN (5x6)	2.5 W 50 W	4.5 V 10 V	8-PowerTDFN	3000 pF
ON Semiconductor FDMS0306S

Catalog

N-Channel PowerTrench® SyncFET™ 30V, 49A, 3.5mΩ

Key Features

• Max rDS(on)= 3.5 mΩ at VGS= 10 V, ID= 21 A

• Max rDS(on)= 4.3 mΩ at VGS= 4.5 V, ID= 19 A

• Advanced package and silicon combination for low rDS(on)and high efficiency

• SyncFET Schottky Body Diode

• MSL1 Robust Package Design

• 100% UIL tested

• RoHS Compliant

Description

The FDMS0309AS has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on)while maintaining excellent switching performance. This device has the added benefit of an efficient monolithic Schottky body diode.