4N38

Obsolete

ON Semiconductor

OPTOISO 5.3KV TRANS W/BASE 6-DIP

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Isolators

4N38

Obsolete

ON Semiconductor

OPTOISO 5.3KV TRANS W/BASE 6-DIP

Deep-Dive with AI

DocumentsDatasheet

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	4N38

Current - DC Forward (If) (Max) [Max]	80 mA
Current - Output / Channel	100 mA
Current Transfer Ratio (Min) [Min]	20 %
Input Type	DC
Mounting Type	Through Hole
Number of Channels	1
Operating Temperature [Max]	100 °C
Operating Temperature [Min]	-55 °C
Package / Case	6-DIP
Package / Case	0.3 in
Package / Case	7.62 mm
Supplier Device Package	6-DIP
Turn On / Turn Off Time (Typ)	5 µs
Vce Saturation (Max) [Max]	1 V
Voltage - Forward (Vf) (Typ)	1.15 V
Voltage - Isolation	5300 Vrms

4N38M Series

6-pin DIP High Voltage Phototransistor Output Optocoupler

Part	Package / Case	Package / Case	Package / Case	Current Transfer Ratio (Min) [Min]	Operating Temperature [Max]	Operating Temperature [Min]	Voltage - Isolation	Voltage - Forward (Vf) (Typ)	Mounting Type	Current - Output / Channel	Input Type	Current - DC Forward (If) (Max) [Max]	Supplier Device Package	Turn On / Turn Off Time (Typ)	Number of Channels	Vce Saturation (Max) [Max]
ON Semiconductor 4N38M	6-DIP	0.3 in	7.62 mm	20 %	100 °C	-40 °C	4170 Vrms	1.15 V	Through Hole	100 mA	DC	80 mA	6-DIP	5 µs	1	1 V
ON Semiconductor 4N38	6-DIP	0.3 in	7.62 mm	20 %	100 °C	-55 °C	5300 Vrms	1.15 V	Through Hole	100 mA	DC	80 mA	6-DIP	5 µs	1	1 V
ON Semiconductor 4N38SR2M	6-SMD Gull Wing			20 %	100 °C	-40 °C	4170 Vrms	1.15 V	Surface Mount	100 mA	DC	80 mA	6-SMD	5 µs	1	1 V
ON Semiconductor 4N38SM	6-SMD Gull Wing			20 %	100 °C	-40 °C	4170 Vrms	1.15 V	Surface Mount	100 mA	DC	80 mA	6-SMD	5 µs	1	1 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	195	$ 0.38

Description

General part information

4N38M Series

The 4N38M, H11D1M, H11D3M, and MOC8204M are phototransistor-type optically coupled optoisolators. A gallium arsenide infrared emitting diode is coupled with a high voltage NPN silicon phototransistor. The device is supplied in a standard plastic six-pin dual-in-line package.

Documents

Technical documentation and resources