4N38M Series

6-pin DIP High Voltage Phototransistor Output Optocoupler

Catalog

6-pin DIP High Voltage Phototransistor Output Optocoupler

Part	Package / Case	Package / Case	Package / Case	Current Transfer Ratio (Min) [Min]	Operating Temperature [Max]	Operating Temperature [Min]	Voltage - Isolation	Voltage - Forward (Vf) (Typ)	Mounting Type	Current - Output / Channel	Input Type	Current - DC Forward (If) (Max) [Max]	Supplier Device Package	Turn On / Turn Off Time (Typ)	Number of Channels	Vce Saturation (Max) [Max]
ON Semiconductor 4N38M	6-DIP	0.3 in	7.62 mm	20 %	100 °C	-40 °C	4170 Vrms	1.15 V	Through Hole	100 mA	DC	80 mA	6-DIP	5 µs	1	1 V
ON Semiconductor 4N38	6-DIP	0.3 in	7.62 mm	20 %	100 °C	-55 °C	5300 Vrms	1.15 V	Through Hole	100 mA	DC	80 mA	6-DIP	5 µs	1	1 V
ON Semiconductor 4N38SR2M	6-SMD Gull Wing			20 %	100 °C	-40 °C	4170 Vrms	1.15 V	Surface Mount	100 mA	DC	80 mA	6-SMD	5 µs	1	1 V
ON Semiconductor 4N38SM	6-SMD Gull Wing			20 %	100 °C	-40 °C	4170 Vrms	1.15 V	Surface Mount	100 mA	DC	80 mA	6-SMD	5 µs	1	1 V

Catalog

6-pin DIP High Voltage Phototransistor Output Optocoupler

Key Features

• High Voltage:

• MOC8204M, BVCEO= 400 V

• H11D1M, BVCEO= 300 V

• H11D3M, BVCEO= 200 V

• Safety and Regulatory Approvals:

• UL1577, 4,170 VACRMSfor 1 Minute

• DIN-EN/IEC60747-5-5, 850 V Peak Working Insulation Voltage

Description

The 4N38M, H11D1M, H11D3M, and MOC8204M are phototransistor-type optically coupled optoisolators. A gallium arsenide infrared emitting diode is coupled with a high voltage NPN silicon phototransistor. The device is supplied in a standard plastic six-pin dual-in-line package.