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Technical Specifications
Parameters and characteristics for this part
| Specification | 4N38M |
|---|---|
| Current - DC Forward (If) (Max) [Max] | 80 mA |
| Current - Output / Channel | 100 mA |
| Current Transfer Ratio (Min) [Min] | 20 % |
| Input Type | DC |
| Mounting Type | Through Hole |
| Number of Channels | 1 |
| Operating Temperature [Max] | 100 °C |
| Operating Temperature [Min] | -40 °C |
| Package / Case | 6-DIP |
| Package / Case | 0.3 in |
| Package / Case | 7.62 mm |
| Supplier Device Package | 6-DIP |
| Turn On / Turn Off Time (Typ) | 5 µs |
| Vce Saturation (Max) [Max] | 1 V |
| Voltage - Forward (Vf) (Typ) | 1.15 V |
| Voltage - Isolation | 4170 Vrms |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tube | 1 | $ 0.77 | |
| 10 | $ 0.46 | |||
| 100 | $ 0.31 | |||
| 500 | $ 0.24 | |||
| 1000 | $ 0.23 | |||
| 2000 | $ 0.21 | |||
| 5000 | $ 0.19 | |||
| 10000 | $ 0.18 | |||
| 25000 | $ 0.17 | |||
| Newark | Each | 1000 | $ 0.22 | |
| 2500 | $ 0.17 | |||
| 10000 | $ 0.17 | |||
| ON Semiconductor | N/A | 1 | $ 0.17 | |
Description
General part information
4N38M Series
The 4N38M, H11D1M, H11D3M, and MOC8204M are phototransistor-type optically coupled optoisolators. A gallium arsenide infrared emitting diode is coupled with a high voltage NPN silicon phototransistor. The device is supplied in a standard plastic six-pin dual-in-line package.
Documents
Technical documentation and resources
