STU6NF10
ActiveN-CHANNEL 100 V, 0.22 Ω, 6 A, DPAK, IPAK LOW GATE CHARGE STRIPFET͐2;2; POWER MOSFET
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STU6NF10
ActiveN-CHANNEL 100 V, 0.22 Ω, 6 A, DPAK, IPAK LOW GATE CHARGE STRIPFET͐2;2; POWER MOSFET
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Technical Specifications
Parameters and characteristics for this part
| Specification | STU6NF10 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 6 A |
| Drain to Source Voltage (Vdss) | 100 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 14 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 280 pF |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 175 °C |
| Operating Temperature [Min] | -65 C |
| Package / Case | TO-251-3 Short Leads, TO-251AA, IPAK |
| Rds On (Max) @ Id, Vgs | 250 mOhm |
| Supplier Device Package | IPAK |
| Supplier Device Package | TO-251 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
STU6NF10 Series
This MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high-efficiency, high-frequency isolated DC-DC converters for Telecom and Computer applications. It is also intended for any applications with low gate drive requirements.
Documents
Technical documentation and resources