STU6NF10 Series

N-channel 100 V, 0.22 Ω, 6 A, DPAK, IPAK low gate charge STripFET͐2;2; Power MOSFET

Catalog

N-channel 100 V, 0.22 Ω, 6 A, DPAK, IPAK low gate charge STripFET͐2;2; Power MOSFET

Part	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Operating Temperature [Max]	Operating Temperature [Min]	Vgs (Max)	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	FET Type	Technology	Supplier Device Package	Supplier Device Package	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds [Max]
STMicroelectronics STU6NF10	100 V	4 V	175 °C	-65 C	20 V	250 mOhm	14 nC	6 A	10 V	IPAK TO-251-3 Short Leads TO-251AA	N-Channel	MOSFET (Metal Oxide)	IPAK	TO-251	Through Hole	280 pF

Catalog

N-channel 100 V, 0.22 Ω, 6 A, DPAK, IPAK low gate charge STripFET͐2;2; Power MOSFET

Description

This MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high-efficiency, high-frequency isolated DC-DC converters for Telecom and Computer applications. It is also intended for any applications with low gate drive requirements.