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Discrete Semiconductor Products
VS-GT100TP120N
ObsoleteVishay General Semiconductor - Diodes Division
IGBT MOD 1200V 180A INT-A-PAK
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Discrete Semiconductor Products
VS-GT100TP120N
ObsoleteVishay General Semiconductor - Diodes Division
IGBT MOD 1200V 180A INT-A-PAK
Deep-Dive with AI
DocumentsDatasheet
Technical Specifications
Parameters and characteristics for this part
| Specification | VS-GT100TP120N |
|---|---|
| Configuration | Half Bridge |
| Current - Collector (Ic) (Max) [Max] | 180 A |
| Current - Collector Cutoff (Max) [Max] | 5 mA |
| IGBT Type | Trench |
| Input | Standard |
| Input Capacitance (Cies) @ Vce | 12.8 nF |
| Mounting Type | Chassis Mount |
| NTC Thermistor | False |
| Operating Temperature | 175 °C |
| Package / Case | INT-A-PAK (3 + 4) |
| Power - Max [Max] | 652 W |
| Supplier Device Package | INT-A-PAK |
| Vce(on) (Max) @ Vge, Ic | 2.35 V |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 1200 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
Description
General part information
GT100 Series
IGBT Module Trench Half Bridge 1200 V 180 A 652 W Chassis Mount INT-A-PAK
Documents
Technical documentation and resources