Zenode.ai Logo
Beta
No image
Discrete Semiconductor Products

VS-GT100TP120N

Obsolete

Deep-Dive with AI

Search across all available documentation for this part.

DocumentsDatasheet
Discrete Semiconductor Products

VS-GT100TP120N

Obsolete

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationVS-GT100TP120N
ConfigurationHalf Bridge
Current - Collector (Ic) (Max) [Max]180 A
Current - Collector Cutoff (Max) [Max]5 mA
IGBT TypeTrench
InputStandard
Input Capacitance (Cies) @ Vce12.8 nF
Mounting TypeChassis Mount
NTC ThermistorFalse
Operating Temperature175 °C
Package / CaseINT-A-PAK (3 + 4)
Power - Max [Max]652 W
Supplier Device PackageINT-A-PAK
Vce(on) (Max) @ Vge, Ic2.35 V
Voltage - Collector Emitter Breakdown (Max) [Max]1200 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$

Description

General part information

GT100 Series

IGBT Module Trench Half Bridge 1200 V 180 A 652 W Chassis Mount INT-A-PAK

Documents

Technical documentation and resources