GT100 Series

Catalog

IGBT MOD 1200V 134A 463W SOT227

Part	IGBT Type	Power - Max [Max]	Package / Case	Vce(on) (Max) @ Vge, Ic	Supplier Device Package	Voltage - Collector Emitter Breakdown (Max) [Max]	Mounting Type	Operating Temperature [Max]	Operating Temperature [Min]	Input	Configuration	Current - Collector (Ic) (Max) [Max]	Current - Collector Cutoff (Max) [Max]	Operating Temperature	Input Capacitance (Cies) @ Vce	Voltage - Collector Emitter Breakdown (Max)
Vishay General Semiconductor - Diodes Division VS-GT100NA120UX	Trench	463 W	SOT-227-4 miniBLOC	2.85 V	SOT-227	1200 V	Chassis Mount	150 °C	-40 °C	Standard	Single	134 A
Vishay General Semiconductor - Diodes Division VS-GT100TP60N	Trench	417 W	INT-A-PAK (3 + 4)	2.1 V	INT-A-PAK	600 V	Chassis Mount			Standard	Half Bridge	160 A	5 mA	175 °C	7.71 nF
Vishay General Semiconductor - Diodes Division VS-GT100TP120N	Trench	652 W	INT-A-PAK (3 + 4)	2.35 V	INT-A-PAK	1200 V	Chassis Mount			Standard	Half Bridge	180 A	5 mA	175 °C	12.8 nF
Vishay General Semiconductor - Diodes Division VS-GT100LA65UF	Trench Field Stop	230 W	SOT-227-4 miniBLOC	2.1 V	SOT-227		Chassis Mount	175 °C	-40 C	Standard	Single Chopper	94 A	80 µA			650 V