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Discrete Semiconductor Products

VS-GT100TP60N

Obsolete

Deep-Dive with AI

Search across all available documentation for this part.

Discrete Semiconductor Products

VS-GT100TP60N

Obsolete

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationVS-GT100TP60N
ConfigurationHalf Bridge
Current - Collector (Ic) (Max) [Max]160 A
Current - Collector Cutoff (Max) [Max]5 mA
IGBT TypeTrench
InputStandard
Input Capacitance (Cies) @ Vce7.71 nF
Mounting TypeChassis Mount
NTC ThermistorFalse
Operating Temperature175 °C
Package / CaseINT-A-PAK (3 + 4)
Power - Max [Max]417 W
Supplier Device PackageINT-A-PAK
Vce(on) (Max) @ Vge, Ic2.1 V
Voltage - Collector Emitter Breakdown (Max) [Max]600 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$

Description

General part information

GT100 Series

IGBT Module Trench Half Bridge 600 V 160 A 417 W Chassis Mount INT-A-PAK

Documents

Technical documentation and resources

No documents available