JAN2N3507L

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Microchip Technology

NPN SILICON SWITCHING 40V TO 50V, 3A

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DocumentsDatasheet Product Change Notice EN

Discrete Semiconductor Products

JAN2N3507L

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Microchip Technology

NPN SILICON SWITCHING 40V TO 50V, 3A

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DocumentsDatasheet Product Change Notice EN

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	JAN2N3507L

Current - Collector (Ic) (Max) [Max]	3 A
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	30
Grade	Military
Mounting Type	Through Hole
Package / Case	TO-205AA, TO-5-3 Metal Can
Power - Max [Max]	1 W
Supplier Device Package	TO-5
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	1.5 V
Voltage - Collector Emitter Breakdown (Max) [Max]	50 V

JANTX2N3507AL-Transistor Series

NPN Silicon Switching 40V to 50V, 3A

Part	Power - Max [Max]	Package / Case	Mounting Type	Vce Saturation (Max) @ Ib, Ic	Transistor Type	Supplier Device Package	Current - Collector Cutoff (Max) [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Current - Collector (Ic) (Max) [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Grade
Microchip Technology 2N3507AL	1 W	TO-205AA TO-5-3 Metal Can	Through Hole	1.5 V	NPN	TO-5AA	1 µA	50 V	3 A
Microchip Technology JANTX2N3507AL	1 W	TO-205AA TO-5-3 Metal Can	Through Hole	1.5 V	NPN	TO-5		50 V	3 A	30	Military
Microchip Technology JANTXV2N3507A	1 W	TO-205AD TO-39-3 Metal Can	Through Hole	1.5 V	NPN	TO-39 (TO-205AD)		50 V	3 A	30	Military
Microchip Technology 2N3507	1 W	TO-205AD TO-39-3 Metal Can	Through Hole	1.5 V	NPN	TO-39	1 µA	50 V	3 A
Microchip Technology 2N3507L	1 W	TO-205AA TO-5-3 Metal Can	Through Hole	1.5 V	NPN	TO-5AA	1 µA	50 V	3 A
Microchip Technology JAN2N3507AL	1 W	TO-205AA TO-5-3 Metal Can	Through Hole	1.5 V	NPN	TO-5		50 V	3 A	30	Military
Microchip Technology JAN2N3507L	1 W	TO-205AA TO-5-3 Metal Can	Through Hole	1.5 V	NPN	TO-5		50 V	3 A	30	Military

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	100	$ 11.90
Microchip Direct	N/A	1	$ 12.81
Newark	Each	100	$ 11.90
		500	$ 11.44

Description

General part information

JANTX2N3507AL-Transistor Series

This specification covers the performance requirements for NPN, silicon, switching 2N3506 and 2N3507 transistors. Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each device type as specified in MIL-PRF-19500/349. Two levels of product assurance are provided for each unencapsulated die (JANHC and JANKC). Provisions for radiation hardness assurance (RHA) to eight radiation levels is provided for JANTXV, JANS, JANHC, and JANKC product assurance levels. RHA level designators "M", "D", "P", "L", "R", "F", "G", and "H" are appended to the device prefix to identify devices, which have passed RHA requirements. The device package for the encapsulated device type are as follows: Similar to TO-39 and surface mount version U4. The dimensions and topography for JANHC and JANKC unencapsulated die are as outlined in MIL-PRF-19500/349.