JANTX2N3507AL-Transistor Series

NPN Silicon Switching 40V to 50V, 3A

Catalog

NPN Silicon Switching 40V to 50V, 3A

Part	Power - Max [Max]	Package / Case	Mounting Type	Vce Saturation (Max) @ Ib, Ic	Transistor Type	Supplier Device Package	Current - Collector Cutoff (Max) [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Current - Collector (Ic) (Max) [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Grade
Microchip Technology 2N3507AL	1 W	TO-205AA TO-5-3 Metal Can	Through Hole	1.5 V	NPN	TO-5AA	1 µA	50 V	3 A
Microchip Technology JANTX2N3507AL	1 W	TO-205AA TO-5-3 Metal Can	Through Hole	1.5 V	NPN	TO-5		50 V	3 A	30	Military
Microchip Technology JANTXV2N3507A	1 W	TO-205AD TO-39-3 Metal Can	Through Hole	1.5 V	NPN	TO-39 (TO-205AD)		50 V	3 A	30	Military
Microchip Technology 2N3507	1 W	TO-205AD TO-39-3 Metal Can	Through Hole	1.5 V	NPN	TO-39	1 µA	50 V	3 A
Microchip Technology 2N3507L	1 W	TO-205AA TO-5-3 Metal Can	Through Hole	1.5 V	NPN	TO-5AA	1 µA	50 V	3 A
Microchip Technology JAN2N3507AL	1 W	TO-205AA TO-5-3 Metal Can	Through Hole	1.5 V	NPN	TO-5		50 V	3 A	30	Military
Microchip Technology JAN2N3507L	1 W	TO-205AA TO-5-3 Metal Can	Through Hole	1.5 V	NPN	TO-5		50 V	3 A	30	Military

Catalog

NPN Silicon Switching 40V to 50V, 3A

Key Features

- JEDEC registered 2N3506 through 2N3507A series

- JANHC, JANKC, JAN, JANTX, JANTXV, and JANS qualifications are available per MIL-PRF-19500/349m(See part nomenclature for all available options.)RoHS compliant versions available (commercial grade only)

- VCR(sat) = 0.5 V @ IC = 500 mA

- Rise time tr = 30 ns max @ IC = 1.5 A, IB1 = 150 mA

- Fall time tf = 35 ns max @ IC = 1.5 A, IB1 = IB2 = 150 mA

- General purpose transistors for medium power applications requiring high frequency switching and low package profile

- Military and other high-reliability applications.

Description

This specification covers the performance requirements for NPN, silicon, switching 2N3506 and 2N3507 transistors. Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each device type as specified in MIL-PRF-19500/349. Two levels of product assurance are provided for each unencapsulated die (JANHC and JANKC). Provisions for radiation hardness assurance (RHA) to eight radiation levels is provided for JANTXV, JANS, JANHC, and JANKC product assurance levels. RHA level designators "M", "D", "P", "L", "R", "F", "G", and "H" are appended to the device prefix to identify devices, which have passed RHA requirements. The device package for the encapsulated device type are as follows: Similar to TO-39 and surface mount version U4. The dimensions and topography for JANHC and JANKC unencapsulated die are as outlined in MIL-PRF-19500/349.