PSMN6R1-25MLDX

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MOSFET N-CH 25V 60A LFPAK33

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Discrete Semiconductor Products

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MOSFET N-CH 25V 60A LFPAK33

Technical Specifications

Parameters and characteristics for this part

Specification	PSMN6R1-25MLDX

Current - Continuous Drain (Id) @ 25°C	60 A
Drain to Source Voltage (Vdss)	25 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Feature	Schottky Diode (Body)
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	10.7 nC
Input Capacitance (Ciss) (Max) @ Vds	702 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Power Dissipation (Max)	42 W
Rds On (Max) @ Id, Vgs	7.24 mOhm
Supplier Device Package	LFPAK33
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.2 V

Part	Current - Continuous Drain (Id) @ 25°C	Configuration	Technology	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs [Max]	Mounting Type	FET Feature	Power - Max [Max]	Drain to Source Voltage (Vdss)	Package / Case	Gate Charge (Qg) (Max) @ Vgs	FET Type	Vgs (Max)	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)
Freescale Semiconductor - NXP PSMN6R1-40HLX	40 A	2 N-Channel (Dual)	MOSFET (Metal Oxide)	3000 pF	-55 °C	175 ░C	6.1 mOhm	2.1 V	LFPAK56D	22.2 nC	Surface Mount	Logic Level Gate	64 W	40 V	8-LFPAK56 SOT-1205
Freescale Semiconductor - NXP PSMN6R1-25MLDX	60 A		MOSFET (Metal Oxide)	702 pF	-55 °C	175 ░C	7.24 mOhm	2.2 V	LFPAK33		Surface Mount	Schottky Diode (Body)		25 V		10.7 nC	N-Channel	20 V	42 W	4.5 V 10 V
Freescale Semiconductor - NXP PSMN6R1-30YLDX	66 A		MOSFET (Metal Oxide)	817 pF	-55 °C	175 ░C	6 mOhm	2.2 V	LFPAK56 Power-SO8	13.6 nC	Surface Mount			30 V	SC-100 SOT-669		N-Channel	20 V	47 W	4.5 V 10 V

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General part information

N-Channel 25 V 60A (Tc) 42W (Tc) Surface Mount LFPAK33

Technical documentation and resources