PSMN6R1 Series
Manufacturer: Freescale Semiconductor - NXP
MOSFET 2N-CH 40V 40A LFPAK56D
| Part | Current - Continuous Drain (Id) @ 25°C | Configuration | Technology | Input Capacitance (Ciss) (Max) @ Vds | Operating Temperature [Min] | Operating Temperature [Max] | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Supplier Device Package | Gate Charge (Qg) (Max) @ Vgs [Max] | Mounting Type | FET Feature | Power - Max [Max] | Drain to Source Voltage (Vdss) | Package / Case | Gate Charge (Qg) (Max) @ Vgs | FET Type | Vgs (Max) | Power Dissipation (Max) | Drive Voltage (Max Rds On, Min Rds On) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Freescale Semiconductor - NXP | 40 A | 2 N-Channel (Dual) | MOSFET (Metal Oxide) | 3000 pF | -55 °C | 175 ░C | 6.1 mOhm | 2.1 V | LFPAK56D | 22.2 nC | Surface Mount | Logic Level Gate | 64 W | 40 V | 8-LFPAK56 SOT-1205 | |||||
Freescale Semiconductor - NXP | 60 A | MOSFET (Metal Oxide) | 702 pF | -55 °C | 175 ░C | 7.24 mOhm | 2.2 V | LFPAK33 | Surface Mount | Schottky Diode (Body) | 25 V | 10.7 nC | N-Channel | 20 V | 42 W | 4.5 V 10 V | ||||
Freescale Semiconductor - NXP | 66 A | MOSFET (Metal Oxide) | 817 pF | -55 °C | 175 ░C | 6 mOhm | 2.2 V | LFPAK56 Power-SO8 | 13.6 nC | Surface Mount | 30 V | SC-100 SOT-669 | N-Channel | 20 V | 47 W | 4.5 V 10 V |