PSMN6R1-40HLX

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MOSFET 2N-CH 40V 40A LFPAK56D

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Discrete Semiconductor Products

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MOSFET 2N-CH 40V 40A LFPAK56D

Technical Specifications

Parameters and characteristics for this part

Specification	PSMN6R1-40HLX

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	40 A
Drain to Source Voltage (Vdss)	40 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs [Max]	22.2 nC
Input Capacitance (Ciss) (Max) @ Vds	3000 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	8-LFPAK56, SOT-1205
Power - Max [Max]	64 W
Rds On (Max) @ Id, Vgs	6.1 mOhm
Supplier Device Package	LFPAK56D
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	2.1 V

Part	Current - Continuous Drain (Id) @ 25°C	Configuration	Technology	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs [Max]	Mounting Type	FET Feature	Power - Max [Max]	Drain to Source Voltage (Vdss)	Package / Case	Gate Charge (Qg) (Max) @ Vgs	FET Type	Vgs (Max)	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)
Freescale Semiconductor - NXP PSMN6R1-40HLX	40 A	2 N-Channel (Dual)	MOSFET (Metal Oxide)	3000 pF	-55 °C	175 ░C	6.1 mOhm	2.1 V	LFPAK56D	22.2 nC	Surface Mount	Logic Level Gate	64 W	40 V	8-LFPAK56 SOT-1205
Freescale Semiconductor - NXP PSMN6R1-25MLDX	60 A		MOSFET (Metal Oxide)	702 pF	-55 °C	175 ░C	7.24 mOhm	2.2 V	LFPAK33		Surface Mount	Schottky Diode (Body)		25 V		10.7 nC	N-Channel	20 V	42 W	4.5 V 10 V
Freescale Semiconductor - NXP PSMN6R1-30YLDX	66 A		MOSFET (Metal Oxide)	817 pF	-55 °C	175 ░C	6 mOhm	2.2 V	LFPAK56 Power-SO8	13.6 nC	Surface Mount			30 V	SC-100 SOT-669		N-Channel	20 V	47 W	4.5 V 10 V

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General part information

Mosfet Array 40V 40A (Ta) 64W (Ta) Surface Mount LFPAK56D

Technical documentation and resources